NE85001 Renesas Electronics Corporation., NE85001 Datasheet
NE85001
Related parts for NE85001
NE85001 Summary of contents
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... PRELIMINARY DATA SHEET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’ ...
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... NE8500199 CHIP 99 TYP. MAX. MIN. TYP. MAX. 28.5 – – – – 2.0 –2.0 – 9 – – 9 NE85001 SERIES ˚ C ˚ ˚C C TEST CONDITIONS Vds = 2.5 V, Vgs = 0 V Vds = 2.5 V, Ids = 4 mA Vds = 2.5 V, Ids = Idss UNIT TEST CONDITIONS f = 7.2 GHz – dBm ...
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... TYPICAL CHARACTERISTICS ( ˚C) A NE8500199 OUTPUT POWER vs. INPUT POWER 200 mA set 7.2 GHz 300 250 I 200 Input Power - dBm in NE85001 SERIES (mA ...
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... NE85001 SERIES S 22 MAG ANG 0.065 –64.6 0.175 –126.4 0.221 –149.1 0.241 –159.2 0.260 –165.6 0.278 –170.8 0.296 –174.6 0.313 –177.8 0.317 – ...
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... The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. NE85001 SERIES 5 ...
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... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 NE85001 SERIES M4 94.11 ...