NESG2046M33 Renesas Electronics Corporation., NESG2046M33 Datasheet

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NESG2046M33

Manufacturer Part Number
NESG2046M33
Description
Necs Npn Sige Transistor For Low Noise, High -gain Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
NESG2046M33-A
Manufacturer:
CEL
Quantity:
135
Document No. PU10464EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr. adopted: V
• 3-pin super lead-less minimold (M33, 0804 package)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG2046M33
NESG2046M33-T3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
NF = 0.8 dB TYP., G
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Unit sample quantity is 50 pcs.
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PACKAGE)
Parameter
a
50 pcs (Non reel)
10 kpcs/reel
= 11.5 dB TYP. @ V
LOW NOISE, HIGH-GAIN AMPLIFICATION
2
Quantity
1.0 mm (t) glass epoxy PCB
PRELIMINARY DATA SHEET
NPN SiGe RF TRANSISTOR FOR
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
P
V
V
V
T
tot
CBO
CEO
EBO
I
T
C
stg
Note
j
A
= +25 C)
CE
= 1 V, I
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
65 to +150
Ratings
C
130
150
1.5
= 3 mA, f = 2 GHz
13
40
5
CEO
(absolute maximum ratings) = 5.0 V
NESG2046M33
Unit
mW
mA
Supplying Form
V
V
V
C
C
NEC Compound Semiconductor Devices 2004

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NESG2046M33 Summary of contents

Page 1

... Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10464EJ01V0DS (1st edition) Date Published January 2004 CP(K) Printed in Japan NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 = mA GHz CE C (absolute maximum ratings) = 5.0 V CEO • ...

Page 2

... Sopt L Lopt mA GHz Sopt L Lopt Note mA MHz CB E 350 s, Duty Cycle 2% Preliminary Data Sheet PU10464EJ01V0DS NESG2046M33 MIN. TYP. MAX. Unit 100 nA 100 nA 140 180 220 15 18 GHz 0.8 1.5 dB 9.5 11.5 dB 0.2 0.4 ...

Page 3

... PACKAGE DIMENSIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PACKAGE) (UNIT: mm) PIN CONNECTIONS 0.64±0.05 (Bottom View) 0.44±0. 0.15 1. Emitter 2. Base 3. Collector Preliminary Data Sheet PU10464EJ01V0DS NESG2046M33 3 ...

Page 4

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 4 Preliminary Data Sheet PU10464EJ01V0DS NESG2046M33 Not all The M8E 00 0110 ...

Page 5

... TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NESG2046M33 0310 ...

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