NESG2046M33 Renesas Electronics Corporation., NESG2046M33 Datasheet - Page 2

• Manufacturer Part Number: NESG2046M33
• Description: Necs Npn Sige Transistor For Low Noise, High -gain Amplification
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
140 to 220
FB
T7
Symbol
h
C
FE
S
I
I
re
NF
G
CBO
EBO
f
21e
Note 1
T
Note 2
350 s, Duty Cycle
a
Preliminary Data Sheet PU10464EJ01V0DS
2
A
V
V
V
V
V
V
Z
V
Z
V
= +25 C)
S
S
CB
EB
CE
CE
CE
CE
CE
CB
= Z
= Z
= 0.5 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Sopt
Sopt
, Z
, Z
E
C
C
C
C
C
E
Test Conditions
L
L
= 0 mA
= 0 mA, f = 1 MHz
= 2 mA
= 15 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 3 mA, f = 2 GHz,
C
= Z
= Z
= 0 mA
Lopt
Lopt
2%
MIN.
140
9.5
15
11
TYP.
11.5
180
0.8
0.2
18
13
NESG2046M33
MAX.
100
100
220
1.5
0.4
GHz
Unit
nA
nA
dB
dB
dB
pF