UML2502 Unisonic Technologies, UML2502 Datasheet - Page 2

• Manufacturer Part Number: UML2502
• Description: N-channel Power Mosfet
• Manufacturer: Unisonic Technologies

Note: 1.
UML2502
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current (Note 2)
Maximum Power Dissipation
Linear Derating Factor
Junction Temperature
Storage Temperature
Junction-to-Ambient
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient ΔBV
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge (Note)
Gate Source Charge
Gate Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
Maximum Continuous Drain-Source Diode
Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%.
2.
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by T
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
GS
=4.5V
J(MAX)
SYMBOL
R
V
BV
t
C
C
t
D(OFF)
C
Q
Q
Q
(T
I
I
GS(TH)
DS(ON)
D(ON)
V
DSS
Q
I
t
GSS
DSS
t
SM
I
OSS
RSS
t
RR
(T
ISS
SD
R
F
GS
GD
S
RR
DSS
A
G
J
/ΔT
=25℃, unless otherwise specified)
=25℃, unless otherwise specified)
J
V
V
V
Reference to 25 ,
V
V
V
V
f=1.0MHz
V
I
V
I
V
(Note)
I
T
D
D
F
J
GS
GS
GS
DS
GS
GS
GS
DS
GS
GS
=1.3A, dI/dt=100A/μs,
=1.0A
=4.0A
SYMBOL
=25℃ (Note)
SYMBOL
=0V, I
=0V, V
=±12V, V
=V
=4.5V, I
=2.5V, I
=0V, V
=10V, R
=5.0V, V
=0V, I
TEST CONDITIONS
θ
V
V
T
GS
JA
I
P
T
GSS
I
DM
STG
DSS
D
D
, I
J
D
S
D
DS
DS
=250μA
=1.3A, T
=250µA
D
D
G
DS
=16V
=4.2A
=3.6A
=15V,
DS
=6Ω, R
=10V,
=0V
℃ I
MIN
J
=25℃
D
D
=10Ω,
=1mA
RATINGS
-55 ~ +150
TYP
+150
1.25
0.01
±12
75
4.2
20
33
MIN
0.6
20
Power MOSFET
TYP MAX UNIT
0.01
740
7.5
8.0
1.8
1.7
8.6
35
50
90
66
10
54
26
16
MAX
100
±100
1.0
1.2
2.7
2.6
1.2
1.3
45
80
12
33
24
13
QW-R502-227.A
UNIT
W/℃
UNIT
℃/W
W
℃
℃
V
V
A
A
V/℃
mΩ
µA
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
A
A
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