UNR31A1 Panasonic Corporation of North America, UNR31A1 Datasheet
UNR31A1
Manufacturer Part Number
UNR31A1
Description
Silicon Pnp Epitaxial Planar Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR31A1.pdf
(3 pages)
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Manufacturer
Quantity
Price
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Part Number:
UNR31A1
Manufacturer:
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Quantity:
90 000
Company:
Part Number:
UNR31A100L
Manufacturer:
PANASONIC
Quantity:
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Transistors with built-in Resistor
UNR31A1
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
−50
−50
−80
100
125
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00084BED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: CE
Internal Connection
L
= 1 kΩ
0.23
= 1 kΩ
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(10 kΩ)
−30%
3
0.80
1.20
B
1
−4.9
Min
−50
−50
0.8
35
R
R
(0.40)
±0.05
±0.05
1
2
(10 kΩ)
2
Typ
1.0
10
80
SSSMini3-F1 Package
− 0.25
+30%
− 0.1
− 0.5
− 0.5
− 0.2
Max
1.2
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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UNR31A1 Summary of contents
Page 1
... Transistors with built-in Resistor UNR31A1 Silicon PNP epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... UNR31A1 120 100 120 Ambient temperature T (°C) a 200 = − 85° 160 25°C 120 −25° −1 −10 −100 Collector current I (mA) C −100 = − 0 25° ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...