CTA2P1N Diodes, Inc., CTA2P1N Datasheet - Page 2

• Manufacturer Part Number: CTA2P1N
• Description: Complex Transistor Array
• Manufacturer: Diodes, Inc.

Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@T
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@T
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
DS30296 Rev. 9 - 2
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
@ T
@ T
@ T
@ T
C
C
j
j
= 25°C
= 125°C
= 25°C
= 125°C
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V
V
V
Symbol
V
V
Symbol
R
(BR)CBO
(BR)CEO
(BR)EBO
BV
V
CE(SAT)
BE(SAT)
t
I
t
I
D(OFF)
DS (ON)
h
C
C
h
I
I
D(ON)
C
D(ON)
2 of 5
CEX
I
h
h
h
C
C
GS(th)
g
GSS
f
t
t
DSS
BL
t
t
FE
oe
T
cb
eb
ie
re
fe
d
s
r
f
FS
oss
rss
DSS
iss
-0.75
Min
Min
-5.0
100
100
200
1.0
0.5
-40
-40
1.5
0.1
1.0
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
30
60
20
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
3.2
4.4
1.0
2.0
7.0
70
⎯
⎯
⎯
⎯
22
11
11
-0.40
-0.75
-0.95
-1.30
Max
-100
-100
300
500
100
225
8.5
8.0
30
15
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
13.5
500
±10
1.0
2.0
7.5
5.0
⎯
⎯
⎯
50
25
20
20
x 10
MHz
Unit
nA
nA
kΩ
μS
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
Unit
mS
µA
nA
pF
pF
pF
ns
ns
Ω
V
V
A
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
L
= -100μA, I
= -150mA, I
= -100μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= -150mA, I
= -500mA, I
= 150Ω, V
= I
= -35V, V
= -35V, V
= -10V, I
= -10V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -10V, I
= 60V, V
= V
=10V, I
= 25V, V
= -30V, I
= -30V, I
= 0V, I
= ±20V, V
= 5.0V, I
= 10V, I
= 10V, V
= 30V, I
B2
= -2.0V, I
GS
= -15mA
, I
Test Condition
Test Condition
D
D
D
D
D
C
C
= 10μA
D
C
C
GS
GS
DS
GEN
E
B
C
= 0.2A
EB(OFF)
EB(OFF)
B
=-250μA
B
B
B
= 0.5A
= 0.2A,
CE
DS
= -1.0mA,
= -20mA,
= -150mA,
= -150mA,
= 0.05A
CE
CE
CE
CE
= 0
= 0
= 0
= -15mA
= -50mA
= -15mA
= -50mA
= 0V
= 7.5V
= 0V
B1
= -1.0V
= 0V
= 10V, R
= -1.0V
= -2.0V
= -1.0V
= -2.0V
= -15mA
= -0.4V
= -0.4V
© Diodes Incorporated
E
C
GEN
= 0
= 0
CTA2P1N
= 25Ω