CTA2P1N Diodes, Inc., CTA2P1N Datasheet - Page 4

• Manufacturer Part Number: CTA2P1N
• Description: Complex Transistor Array
• Manufacturer: Diodes, Inc.

DS30296 Rev. 9 - 2
3.0
2.5
2.0
1.5
200
150
100
1.0
1.0
0.8
0.6
0.4
0.2
Fig. 10 On-Resistance vs. Junction Temperature (2N7002)
50
0
0
-55
0
0
V
GS
2.0/1.0V
Fig. 8 On-Region Characteristics (2N7002)
= 10V
-30
25
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Ambient Temperature (Total Device)
V , DRAIN-SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Max Power Dissipation vs.
A
DS
j
1
50
-5
75
20
2
100 125
45
3
70
150
V
I = 200mA
D
95
GS
MMBT4403 Section
= 10V,
4
°
175
120
5.0V
5.5V
2N7002 Section
200
145
5
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Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)
6
5
4
3
2
1
0
(Continued)
7
6
5
4
3
2
0
1
0
0
Fig. 9 On-Resistance vs. Drain Current (2N7002)
I = 50mA
D
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.2
4
V
I , DRAIN CURRENT (A)
GS
D
= 5.0V
6
I = 500mA
D
0.4
8
V
GS
= 10V
10
0.6
12
14
0.8
T = 25 C
16
j
© Diodes Incorporated
°
18
1.0
CTA2P1N