RT3WLMM ISAHAYA ELECTRONICS CORPORRATION, RT3WLMM Datasheet - Page 4

• Manufacturer Part Number: RT3WLMM
• Description: Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

TYPICAL CHARACTERISTICS （Tr2）
PRELIMINARY
10000
1000
-50
-40
-30
-20
-10
100
-0
10
100
0.1
1
10
-0
-0.1
1
-0.1
Ta=25℃
VCE=-6V
100(@IC=-1mA)
COLLECTOR EMITTER VOLTAGE VCE(V)
Ta=25℃
IE=0
f=1MHz
COLLECTOR TO BASE VOLTAGE VCB(V)
-1
COMMON EMITTER OUTPUT
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT IC(mA)
DC FORWARD CURRENT GAIN
-1
VS. COLLECTOR CURRENT
-1
0.18mA
-2
-10
0.16mA
-3
ISAHAYA ELECTRONICS CORPORATION
-10
0.14mA
-100
-4
0.10mA
0.12mA
Ta=25℃
0.08mA
0.04mA
0.06mA
0.02mA
IB=0
-1000
-5
-100
250
200
150
100
-50
-40
-30
-20
-10
50
-0
0
0.1
-0.0
Ta=25℃
VCE=-6V
Ta=25℃
VCE=-6V
BASE TO EMITTER VOLTAGE VBE(V)
-0.2
COMMON EMITTER TRANSFER
GAIN BAND WIDTH PRODUCT
EMITTER CURRENT IE(mA)
VS. EMITTER CURRENT
1
For Low Frequency Amplify Application
-0.4
-0.6
10
RT3WLMM
Silicon Epitaxial Type
-0.8
Composite Transistor
-1.0
100