RT3T22M ISAHAYA ELECTRONICS CORPORRATION, RT3T22M Datasheet - Page 2

• Manufacturer Part Number: RT3T22M
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
V
I
h
V
V
V
R
R
f
T
CBO
FE
1000
(BR)CEO
CE(sat)
I(ON)
I(OFF)
1
2
Symbol
0.1
10
/R
100
1
10
1
1
0.0
Input on voltage-collector current
collector current - Input on voltage
VCE=0.2V
VCE=5V
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
0.4
Input off voltage ＶＩ（ＯＦＦ）（Ｖ）
colector curent ＩＣ （ｍ Ａ）
0.8
10
Parameter
1.2
ISAHAYA ELECTRONICS CORPORATION
1.6
(Tr1)
100
2.0
I
V
V
I
V
V
-
-
V
C
C
1000
CB
CE
CE
CE
CE
=100μA,R
=10mA,I
100
10
=5V,I
=0.2V,I
=5V,I
=6V,I
=50V,I
1
C
C
E
=5mA
=100μA
=-10mA
B
DC forward gain -collector current
E
VCE=5V
C
=0.5mA
Test conditions
=0
=5mA
BE
=∞
collector current ＩＣ （ｍ Ａ）
10
CompositeTransistor With Resistor
Min
0.8
0.9
50
50
16
-
-
-
-
For Switching Application
RT3T22M
100
Silicon Epitaxial Type
Limits
Typ
200
0.1
1.8
1.1
1.0
22
-
-
-
Max
1.1
0.1
0.3
3.0
28
-
-
-
-
MH
Unit
μA
kΩ
V
V
V
V
-
-
Z