BYT03-400_01 ST Microelectronics, Inc., BYT03-400_01 Datasheet - Page 3

• Manufacturer Part Number: BYT03-400_01
• Description: HIGH Efficiency Ultrafast Diode
• Manufacturer: ST Microelectronics, Inc.

Fig. 3: Thermal resistance versus lead length.
Fig. 5: Forward voltage drop versus forward current.
90
80
70
60
50
40
30
20
10
100.0
Fig. 1: Average forward power dissipation versus
average forward current.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10.0
0
1.0
0.1
0.0
5
Rth(°C/W)
PF(av)(W)
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
IFM(A)
(Maximum values)
(Maximum values)
0.5
Tj=100°C
Tj=100°C
10
(Typical values)
(Typical values)
1.0
Tj=100°C
Tj=100°C
= 0.05
Lleads(mm)
1.5
= 0.1
Rth(j-l)
Rth(j-a)
IF(av)(A)
VFM(V)
15
(Maximum values)
Tj=25°C
2.0
= 0.2
2.5
= 0.5
20
=tp/T
3.0
T
= 1
tp
3.5
25
Fig. 2: Average forward current versus ambient
temperature ( = 0.5)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, Lleads = 10mm).
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
20
18
16
14
12
10
8
6
4
2
0
1.E-01
1
C(pF)
0
IF(av)(A)
Zth(j-a)/Rth(j-a)
Single pulse
= 0.5
= 0.2
= 0.1
25
Rth(j-a)=75°C/W
1.E+00
10
50
Rth(j-a)=Rth(j-l)
Tamb(°C)
1.E+01
VR(V)
tp(s)
75
100
100
1.E+02
BYT03-400
=tp/T
125
Vosc=30mV
T
F=1MHz
Tj=25°C
tp
1.E+03
1000
3/5
150