BAT63-07WE6811 Infineon Technologies Corporation, BAT63-07WE6811 Datasheet

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BAT63-07WE6811

Manufacturer Part Number
BAT63-07WE6811
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
Silicon Schottky Diode



BAT63-07W
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BAT63-07WE6811
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
S
Low barrie diode for detectors up to GHz
For high-speed switching applications
Zero bias detector diode
frequencies

103 °C
thJA
please refer to Application Note Thermal Resistance
1)
Package
SOT343
Configuration
parallel pair
1
Symbol
V
I
P
T
T
Symbol
R
F
j
stg
R
tot
thJS
-55 ... 150
Value
BAT63-07WE6811
Value

L
100
100
150
470
S
8
1.6
(nH) Marking
Jul-24-2002
63s
Unit
V
mA
mW
°C
Unit
K/W

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BAT63-07WE6811 Summary of contents

Page 1

... Junction - soldering point 1 For calculation of R please refer to Application Note Thermal Resistance thJA Package Configuration SOT343 parallel pair Symbol tot stg Symbol R thJS 1 BAT63-07WE6811 L (nH) Marking S 1.6 63s Value Unit 8 V 100 mA 100 mW 150 °C -55 ... 150 Value Unit K/W 470  Jul-24-2002 ...

Page 2

... Reverse voltage I = 100 µA R Forward voltage Characteristics Diode capacitance MHz R Differential resistance kHz R = 25°C, unless otherwise specified A Symbol BAT63-07WE6811 Values Unit min. typ. max 190 300 mV - 0.65 0. Jul-24-2002 ...

Page 3

... V ) Forward current Parameter Permissible Puls Load 105 120 °C 150 BAT63-07WE6811 = ( TA=125°C TA=85°C TA=25°C -3 TA=-40° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = thJS 0.5 0.2 0.1 2 0.05 0.02 0.01 0.005 ...

Page 4

... Rectifier voltage V = out  R = Parameter ° Testcircuit RL=500k 200k 100k 50k 20k BAT63-07WE6811 D.U 1nF Jul-24-2002 ...

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