BSO612CVG Infineon Technologies Corporation, BSO612CVG Datasheet
BSO612CVG
Available stocks
Related parts for BSO612CVG
BSO612CVG Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated · Pb-free lead plating;RoHS compliant Type Package BSO 612 CV PG-DSO-8 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current ...
Page 2
Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint sec. £ cooling area ; t @ min. footprint ...
Page 3
Electrical Characteristics , at T Parameter Characteristics Transconductance ³ DS(on)max ³ DS(on)max Input capacitance ...
Page 4
Electrical Characteristics Parameter Characteristics Gate to source charge - Gate to drain charge ...
Page 5
Power Dissipation (N-Ch tot A BSO 612 CV 2.2 W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Drain current (N-Ch ...
Page 6
Safe operating area (N-Ch parameter : °C A BSO 612 ...
Page 7
Typ. output characteristics (N-Ch parameter µs p BSO 612 CV 7 2.00W tot 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 ...
Page 8
Typ. transfer characteristics (N-Ch.) parameter µ ³ ...
Page 9
Drain-source on-resistance (N-Ch DS(on) j parameter : BSO 612 CV 0.34 W 0.28 0.24 0.20 0.16 98% 0.12 typ 0.08 0.04 0.00 -60 - ...
Page 10
Typ. capacitances (N-Ch parameter MHz Forward characteristics of reverse diode (N-Ch.) ...
Page 11
Avalanche Energy parameter 105 ...
Page 12
Drain-source breakdown voltage (N-Ch.) (BR)DSS j BSO 612 -60 - Rev. 2.0 Drain-source breakdown voltage V (BR)DSS -72 V -68 -66 ...
Page 13
Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...