BTS112A Infineon Technologies Corporation, BTS112A Datasheet

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Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab V Type DS BTS 112A 60 V Maximum Ratings Parameter Drain-source voltage R Drain-gate voltage Gate-source voltage ...

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Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage 1 ...

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Electrical Characteristics (cont’ unless otherwise specified. j Parameter Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage Reverse recovery time ...

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Examples for short-circuit protection – 55 ... + 150 C, unless otherwise specified. j Parameter Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time before short circuit j I Short-circuit protection SC ...

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P Max. power dissipation tot Typical output characteristics : t Parameter = Typ. drain-source on-state resistance DS(on) Parameter Safe operating area D DS ...

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Drain-source on-state resistance DS(on Parameter Typ. transfer characteristic Parameter = 80 s, ...

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I Continuous drain current D V Parameter: – Typ. gate-source leakage current GSS Parameter: = – Forward characteristics of ...

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Transient thermal impedance : Parameter = / thJC p 8 ® TEMPFET BTS 112 A 19.02.04 ...

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TO 220 AB Ordering Code Standard C67078-S5014-A3 9.9 4.4 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB SMD Version ...

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Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms ...