GP1200FSM18 Dynex Semiconductor, GP1200FSM18 Datasheet
GP1200FSM18
Related parts for GP1200FSM18
GP1200FSM18 Summary of contents
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... The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications ...
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... GP1200FSM18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... 60mA 15V 1200A 15V 1200A 125˚ case 1ms 1200A 1200A 125˚C F case V = 25V 0V 1MHz GP1200FSM18 Min. Typ. Max. Units - - 5.5 4.5 6 1200 2400 A - 2.2 2.5 ...
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... GP1200FSM18 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy ...
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... 1200A 50nH 1.50 1.25 1.00 E OFF E ON 0.75 E REC 0.50 0. 800 1000 1200 - (A) C Fig. 6 Typicalswitching energy vs gate resistance GP1200FSM18 V = 20/15/12V ge = 125˚C 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 125˚C = 15V = 900V E OFF Gate resistance, R ...
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... GP1200FSM18 2400 2200 2000 T 1800 1600 1400 1200 1000 800 600 400 200 0 0 2.0 0.5 1.0 1.5 Foward voltage, V Fig. 7 Diode typical forward characteristics 10000 1000 I (DC) C max 100 100 Collector emitter voltage, V Fig. 9 Forward bias safe operating area 6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
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... For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Aux C Aux 14 140 Nominal weight: 1050g Module outline type code: F GP1200FSM18 6x Ø7 7/9 ...
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... GP1200FSM18 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs – punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries ...
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... Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5410-1 Issue No. 1.2 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM GP1200FSM18 9/9 ...