ESM4120 Dynex Semiconductor, ESM4120 Datasheet

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ESM4120

Manufacturer Part Number
ESM4120
Description
Recovery Diode
Manufacturer
Dynex Semiconductor
Datasheet
Replaces March 1998 version, DS4141-3.4
APPLICATIONS
FEATURES
VOLTAGE RATINGS
CURRENT RATINGS
ESM4120 10
ESM4120 08
ESM4120 06
Double Side Cooled
Single Side Cooled (Anode side)
Symbol
Type Number
Induction Heating
A.C. Motor Drives
Inverters And Choppers
Welding
High Frequency Rectification
UPS
Double Side Cooling
High Surge Capability
Low Recovery Charge
I
I
I
I
F(RMS)
F(RMS)
F(AV)
F(AV)
I
I
F
F
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Reverse Voltage
Repetitive Peak
1000
V
800
600
V
RRM
Parameter
V
RSM
Conditions
= V
RRM
+ 100V
Half wave resistive load, T
T
T
Half wave resistive load, T
T
T
case
case
case
case
= 65
= 65
= 65
= 65
o
o
o
o
C
C
C
C
See Package Details for further information.
Conditions
Outline type code: M771.
case
case
= 65
= 65
o
o
C
C
Fast Recovery Diode
Advance Information
KEY PARAMETERS
DS4141-4.0 January 2000
V
I
I
Q
t
F(AV)
FSM
rr
RRM
r
ESM4120
Max.
565
490
360
290
334
210
ESM4120
4000A
1000V
Units
0.8 s
334A
15 C
A
A
A
A
A
A
1/8

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ESM4120 Summary of contents

Page 1

... Welding High Frequency Rectification UPS FEATURES Double Side Cooling High Surge Capability Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage V RRM V ESM4120 10 1000 ESM4120 08 800 ESM4120 06 600 CURRENT RATINGS Symbol Parameter Double Side Cooled I Mean forward current F(AV) I RMS value ...

Page 2

... ESM4120 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Symbol Parameter R Thermal resistance - junction to case th(j-c) Thermal resistance - case to heatsink R th(c-h) T Virtual junction temperature ...

Page 3

... RRM case I = 200A 125 case 125 125 C vj di/dt = 1000A RA1 = 0. RA1 Typ. Conditions case o = 125 C 0.8 /dt = 50A 100V 125 C j ESM4120 Units Max 100 1. 1 3/8 ...

Page 4

... ESM4120 CURVES 1000 900 800 700 600 500 1.25 500 400 300 200 100 4/8 Measured under pulse conditions T = 125˚C j 1.5 1.75 Instantaneous forward voltage V Fig.1 Maximum (limit) forward characteristics Measured under pulse conditions T = 125˚ 25˚ 1.0 1.2 1.4 Instantaneous forward voltage V Fig.2 Maximum (limit) forward characteristics T = 25˚ ...

Page 5

... Rate of rise of reverse current dI Fig.4 Typical reverse recovery current vs rate of rise of forward current Conditions 125 ˚ 100V 1000A 500A 200A 100A F 100 1000 / Conditions 125˚ 100V 1000A F 100 1000 / ESM4120 5/8 ...

Page 6

... ESM4120 0.1 0.01 0.001 0.01 Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 6/8 0.1 1 Time - (s) 2 holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø ...

Page 7

... Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. Application Note Number AN4506 AN4839 AN4853 AN5001 ESM4120 7/8 ...

Page 8

... ESM4120 HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...

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