GP1600FSS12 Dynex Semiconductor, GP1600FSS12 Datasheet
GP1600FSS12
Related parts for GP1600FSS12
GP1600FSS12 Summary of contents
Page 1
... Replaces October 1999 version, DS5173-3.0 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high ...
Page 2
... GP1600FSS12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed 25˚C unless stated otherwise. ...
Page 3
... 120mA 15V, I =1600A 15V 1600A 125˚ case 1ms p I =1600A F I =1600A 125˚C F case V = 25V 0V 1MHz GP1600FSS12 Min. Typ. Max. Units - - 7 2.7 3 3.2 4 1600 3200 - 2.2 2.4 ...
Page 4
... GP1600FSS12 INDUCTIVE SWITCHING CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge ...
Page 5
... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures Fig.3 Definition of turn-on switching times Fig.4 Definition of turn-off switching times GP1600FSS12 5/11 ...
Page 6
... GP1600FSS12 CURVES 3200 Common emitter T = 25˚C case 2800 2400 2000 1600 1200 800 400 0 0 1.0 2.0 Collector-emitter voltage, V Fig.5 Typical output characteristics 400 Conditions 25˚C, case 350 V = 600V 15V GE 300 250 200 150 100 200 400 600 800 Collector current, I Fig ...
Page 7
... C Fig.10 Typical turn-off energy vs collector current 2500 2000 1500 T = 25˚C 1000 case 500 0 0 1200 1400 1600 - (A) GP1600FSS12 = 125˚C, = 600V, = 15V 200 600 800 1000 1200 400 Collector current ( d(off) t d(on) ...
Page 8
... GP1600FSS12 3200 2800 2400 T 2000 1600 1200 800 400 0 0 0.5 1 1.5 Forward voltage, V Fig.13 Diode typical forward characteristics 10000 I max. (single pulse) C 1000 100 100 Collector-emitter voltage, V Fig.15 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
Page 9
... Fig.17 3-Phase inverter operating frequency Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2500 2000 1500 1000 500 Case temperature, T Fig.18 DC current rating vs case temperature GP1600FSS12 80 100 120 140 160 - (˚C) case 9/11 ...
Page 10
... GP1600FSS12 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs – ...
Page 11
... Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5173-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM GP1600FSS12 11/11 ...