DF252 Dynex Semiconductor, DF252 Datasheet

no-image

DF252

Manufacturer Part Number
DF252
Description
360a 1600v Disc Fast Recovery Diode
Manufacturer
Dynex Semiconductor
Datasheet
Replaces March 1998 version, DS4142-3.4
APPLICATIONS
FEATURES
VOLTAGE RATINGS
CURRENT RATINGS
DF252 16
DF252 14
DF252 12
DF252 10
DF252 08
DF252 06
Double Side Cooled
Single Side Cooled (Anode side)
Symbol
Type Number
Induction Heating
A.C. Motor Drives
Inverters And Choppers
Welding
High Frequency Rectification
UPS
Double Side Cooling
High Surge Capability
Low Recovery Charge
I
I
I
F(RMS)
I
F(RMS)
F(AV)
F(AV)
I
I
F
F
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Reverse Voltage
Repetitive Peak
1600
1400
1200
1000
V
800
600
RRM
V
Parameter
V
RSM
Conditions
= V
RRM
+ 100V
Half wave resistive load, T
T
T
T
Half wave resistive load, T
T
case
case
case
case
= 65
= 65
= 65
= 65
o
o
o
o
C
C
C
C
See Package Details for further information.
Conditions
Outline type code: M771.
case
case
= 65
= 65
o
o
C
C
Fast Recovery Diode
Advance Information
KEY PARAMETERS
DS4142-4.0 January 2000
V
I
I
Q
t
F(AV)
FSM
rr
RRM
r
Max.
560
500
435
375
360
276
DF252
DF252
3000A
1600V
Units
3.2 s
35 C
360A
A
A
A
A
A
A
1/7

Related parts for DF252

DF252 Summary of contents

Page 1

... Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage V RRM V DF252 16 1600 DF252 14 1400 DF252 12 1200 DF252 10 1000 DF252 08 800 DF252 06 600 CURRENT RATINGS Symbol Parameter Double Side Cooled I Mean forward current F(AV) RMS value I F(RMS) I Continuous (direct) forward current ...

Page 2

... DF252 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Parameter Symbol R Thermal resistance - junction to case th(j-c) R Thermal resistance - case to heatsink th(c-h) T Virtual junction temperature ...

Page 3

... I = 750A 125 C, V case 150 150 C vj di/dt = 1000A RA1 = 0. RA1 Conditions Typ case o = 125 C 3.2 /dt = 100A 100V R 1 125 C j DF252 Max. Units - 3/7 ...

Page 4

... DF252 CURVES 3000 2500 2000 1500 1000 500 1.0 500 400 300 200 100 0 1.0 4/7 Measured under pulse conditions T = 25˚ 150˚C j 2.0 3.0 Instantaneous forward voltage V Fig.1 Maximum (limit) forward characteristics Measured under pulse conditions T = 150˚ 25˚C j 1.2 1.4 Instantaneous forward voltage V Fig ...

Page 5

... Fig.4 Typical reverse recovery current vs rate of fall of forward current Conditions 150˚ 100V 2000 1000 500 200 100 F 100 / 2000A 1000A 500A 200A 100A F 100 / DF252 1000 1000 5/7 ...

Page 6

... DF252 0.1 0.01 0.001 0.01 Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 6/7 0.1 1 Time - (s) 2 holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø42 max Ø19 nom Ø ...

Page 7

... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...

Related keywords