GP1200FSS18 Dynex Semiconductor, GP1200FSS18 Datasheet
GP1200FSS18
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GP1200FSS18 Summary of contents
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... The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications ...
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... GP1200FSS18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... 60mA 15V 1200A 15V 1200A 125˚ case 1ms 1200A 1200A 125˚C F case V = 25V 0V 1MHz GP1200FSS18 Typ. Min. Max. Units - - 4.5 5 1200 2400 A - 2.2 2.5 ...
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... GP1200FSS18 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r Turn-on energy loss E ON Diode reverse recovery charge Q rr Diode reverse current I rr Diode reverse recovery energy ...
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... 1200A 50nH 1.50 1.25 1.00 E OFF E ON 0.75 E REC 0.50 0. 800 1000 1200 - (A) C Fig. 6 Typicalswitching energy vs gate resistance GP1200FSS18 V = 20/15/12V ge = 125˚C 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 125˚C = 15V = 900V E OFF Gate resistance, R ...
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... GP1200FSS18 2400 2200 2000 T 1800 1600 1400 1200 1000 800 600 400 200 0 0 0.5 1.0 1.5 2.0 Foward voltage, V Fig. 7 Diode typical forward characteristics 10000 1000 I (DC) C max 100 100 Collector emitter voltage, V Fig. 9 Forward bias safe operating area 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
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... Case temperature, T Fig current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 100 120 140 160 - (˚C) case GP1200FSS18 7/10 ...
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... GP1200FSS18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures ...
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... Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1200FSS18 Application Note Number AN4502 AN4503 AN4504 ...
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... GP1200FSS18 HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...