GP1200FSS18 Dynex Semiconductor, GP1200FSS18 Datasheet - Page 3

• Manufacturer Part Number: GP1200FSS18
• Description: Single Switch Igbt Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
case
Symbol
V
V
= 25˚C unless stated otherwise.
I
I
C
GE(TH)
CE(sat)
I
V
L
CES
GES
I
FM
F
ies
M
F
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Parameter
V
V
V
I
V
V
DC
t
I
I
V
C
p
F
F
GE
GE
GE
GE
GE
CE
= 1ms
= 1200A
= 1200A, T
= 60mA, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
= 25V, V
Test Conditions
CE
CE
C
C
GE
GE
case
= 1200A
= 1200A, T
= V
= V
CE
= 0V, f = 1MHz
= V
= 0V
= 125˚C
CES
CES
CE
-
, T
case
case
= 125˚C
= 125˚C
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
Typ.
135
GP1200FSS18
5.5
3.5
4.3
2.2
2.3
20
-
-
-
-
-
Max.
1200
2400
6.5
2.5
2.6
25
1
4
4
5
-
-
Units
mA
mA
nH
nF
V
V
V
A
A
V
V
3/10
A