GP1600FSM12 Dynex Semiconductor, GP1600FSM12 Datasheet
GP1600FSM12
Related parts for GP1600FSM12
GP1600FSM12 Summary of contents
Page 1
... The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications ...
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... GP1600FSM12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... 120mA 4 15V, I =1600A 15V 1600A 125˚ case 1ms p I =1600A F I =1600A 125˚C F case V = 25V 0V 1MHz GP1600FSM12 Typ. Max. Units - - 6 2.7 3 3.2 4 1600 - - 3200 A - 2.2 2 2.3 2 ...
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... GP1600FSM12 INDUCTIVE SWITCHING CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge rr Q Diode reverse recovery charge ...
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... B 200 C 150 100 4 3 1200 1400 1600 - (A) C Fig.8 Typical turn-on energy vs collector current GP1600FSM12 V = 20/15/12/10V ge = 125˚C 1.0 2.0 3.0 4.0 Collector-emitter voltage (V) ce Fig.6 Typical output characteristics = 125˚C, = 600V 15V 200 400 600 800 ...
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... GP1600FSM12 600 Conditions 25˚C, case V = 600V, CE 500 V = 15V GE 400 300 200 100 0 0 200 400 600 800 Collector current, I Fig.9 Typical turn-off energy vs collector current 120 Conditions 600V 15V, GE 100 case 200 400 600 800 Collector current, I Fig ...
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... T case 0 0 2.5 3 3.5 - (V) F Fig.14 Reverse bias safe operating area 100 100 1ms p 1 0.1 1000 10000 0.001 - (V) ce Fig.16 Transient thermal impedance GP1600FSM12 = 125˚C 200 400 600 800 1000 Collector-emitter voltage (V) CE Diode Transistor 0.01 0.1 1 Pulse width (s) p 1200 10 7/10 ...
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... GP1600FSM12 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 Case temperature, T Fig.17 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 105 115 125 - (˚ ...
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... Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Aux C Aux 14 140 Nominal weight: 1050g Module outline type code: F GP1600FSM12 6x Ø7 9/10 ...
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... GP1600FSM12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. ...