GP1601FSS18 Dynex Semiconductor, GP1601FSS18 Datasheet

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GP1601FSS18

Manufacturer Part Number
GP1601FSS18
Description
Single Switch Low Vce ( Sat ) Igbt Module
Manufacturer
Dynex Semiconductor
Datasheet
Replaces January 2000 version, DS5248-3.0
FEATURES
APPLICATIONS
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
enhancement mode, insulated gate bipolar transistor (IGBT)
module.
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1601FSS18
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Low V
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
1600A Per module
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
The Powerline range of high power modules includes dual
The GP1601FSS18 is a single switch 1800V, n channel
The module incorporates an electrically isolated base plate
CE(SAT)
Designed with low V
CE(SAT)
to minimise conduction
Single Switch Low V
KEY PARAMETERS
V
V
I
I
C
C(PK)
CES
CE(sat)
Fig. 2 Electrical connections - (not to scale)
(See package details for further information)
Fig. 1 Single switch circuit diagram
(typ)
(max)
(max)
Aux C
G
Aux E
Aux C
Aux E
Outline type code: F
G
External connection
External connection
E1
C1
E1
E2
1800V
2.6V
1600A
3200A
CE(SAT)
GP1601FSS18
C1
C2
DS5248-4.2 January 2001
GP1601FSS18
C2
E2
IGBT Module
1/9

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GP1601FSS18 Summary of contents

Page 1

... Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1601FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low V ...

Page 2

... GP1601FSS18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...

Page 3

... 80mA 15V 1600A 15V 1600A 125˚ case 1ms 1600A 1600A 125˚C F case V = 25V 0V 1MHz GP1601FSS18 Min. Typ. Max. Units - - 4.5 5.5 6 2 1600 3200 A - 2.2 2.5 ...

Page 4

... GP1601FSS18 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy ...

Page 5

... OFF I = 1600A 1600 T 1400 1200 E ON 1000 800 E 600 REC 400 200 1200 1400 1600 - (A) C Fig. 6 Typical turn-off energy vs collector current GP1601FSS18 V = 20/15/12/10V ge = 125˚C 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 125˚C = ±15V = 900V E OFF ...

Page 6

... GP1601FSS18 3200 2800 T 2400 2000 1600 1200 800 400 0 0 2.0 0.5 1.0 1.5 Foward voltage, V Fig. 7 Diode typical forward characteristics 10000 I max. (single pulse) C 1000 100 100 Collector-emitter voltage, V Fig. 9 Forward bias safe operating area 6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...

Page 7

... For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Aux C Aux 14 140 Nominal weight: 1600g Module outline type code: F GP1601FSS18 6x Ø7 7/9 ...

Page 8

... GP1601FSS18 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs – punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries ...

Page 9

... Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5248-4 Issue No. 4.2 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM GP1601FSS18 9/9 ...

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