GP1601FSS18 Dynex Semiconductor, GP1601FSS18 Datasheet - Page 5

• Manufacturer Part Number: GP1601FSS18
• Description: Single Switch Low Vce ( Sat ) Igbt Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1200
1000
800
600
400
200
2000
1600
3200
2800
2400
1200
400
800
0
Fig. 5 Typical turn-on energy vs collector current
0
0
0
T
V
V
R
Common emitter
T
case
GE
CE
g
case
= 2.2Ω
200
Fig. 3 Typical output characteristics
= 900V
= ±15V
= 125˚C
= 25˚C
1.0
400
Collector-emitter voltage, V
Collector current, I
600
2.0
800
1000
3.0
C
- (A)
V
ce
ge
1200 1400
- (V)
= 20/15/12/10V
4.0
E
E
ON
OFF
E
REC
1600
5.0
1000
2000
1800
1600
1400
1200
2000
1600
3200
2800
2400
1200
600
400
200
800
400
800
0
Fig. 6 Typical turn-off energy vs collector current
0
0
0
T
V
V
I
Common emitter
T
T
case
GE
CE
case
= 1600A
1
Fig. 4 Typical output characteristics
= 900V
= ±15V
= 125˚C
= 125˚C
1.0
2
Collector-emitter voltage, V
E
OFF
Gate resistance, R
3
2.0
4
5
3.0
6
G
- (Ohms)
GP1601FSS18
4.0
V
ce
7
ge
- (V)
= 20/15/12/10V
8
5.0
E
ON
E
9
REC
10
6.0
5/9