GP1601FSS18 Dynex Semiconductor, GP1601FSS18 Datasheet - Page 4

• Manufacturer Part Number: GP1601FSS18
• Description: Single Switch Low Vce ( Sat ) Igbt Module
• Manufacturer: Dynex Semiconductor

GP1601FSS18
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/9
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
I
I
OFF
t
REC
OFF
t
REC
t
t
ON
ON
rr
rr
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
= 1600A, V
= 1600A, V
R
R
G(ON)
G(ON)
dI
Test Conditions
dI
Test Conditions
F
F
/dt = 5000A/ s
/dt = 6000A/ s
V
V
V
V
I
= R
L ~ 50nH
I
= R
L ~ 50nH
C
GE
CE
C
GE
CE
= 1600A
= 1600A
= 900V
= 900V
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 50% V
= 50% V
= 2.2
= 2.2
CES
CES
,
,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
1700
1100
1500
Typ.
Typ.
300
500
350
700
550
850
320
300
850
400
300
500
300
750
200
Max.
1900
1300
Max.
1650
1050
380
700
500
900
650
350
550
450
700
400
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C