ESM4120 Dynex Semiconductor, ESM4120 Datasheet - Page 2

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ESM4120

Manufacturer Part Number
ESM4120
Description
Recovery Diode
Manufacturer
Dynex Semiconductor
Datasheet
ESM4120
SURGE RATINGS
2/8
THERMAL AND MECHANICAL DATA
Symbol
Symbol
R
R
I
I
T
FSM
FSM
th(c-h)
T
I
I
th(j-c)
2
2
-
stg
vj
t
t
Surge (non-repetitive) forward current
I
Surge (non-repetitive) forward current
I
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
2
2
t for fusing
t for fusing
Parameter
Parameter
10ms half sine; with 0% V
10ms half sine; with 50% V
Double side cooled
Single side cooled
Clamping force 3.5kN
with mounting compound
On-state (conducting)
Conditions
Conditions
RRM,
RRM,
T
Anode dc
Cathode dc
Single side
dc
Double side
T
j
= 125
j
= 125
o
C
o
C
Min.
-55
3.0
-
-
-
-
-
-
64.8 x 10
101 x 10
Max.
4.5
3.6
0.133
0.147
Max.
0.04
0.02
0.07
125
125
4.0
3
3
Units
Units
o
o
o
o
o
C/W
C/W
C/W
C/W
C/W
A
A
kA
kA
kN
o
o
C
C
2
2
s
s

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