STPR850DF Sirectifier Semiconductors, STPR850DF Datasheet
STPR850DF
Manufacturer Part Number
STPR850DF
Description
Ultra Fast Recovery Diodes
Manufacturer
Sirectifier Semiconductors
Datasheet
1.STPR850DF.pdf
(2 pages)
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Part Number
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Quantity
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C(TAB)
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
Symbol
T
STPR850DF
STPR860DF
J
R
I
I
T
, T
FSM
(AV)
V
C
A=Anode, C=Cathode, TAB=Cathode
I
OJC
RR
R
F
J
STG
2. Reverse Recovery Test Conditions: I
3. Thermal Resistance Junction To Case.
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating And Storage Temperature Range
C
V
STPR850DF thru STPR860DF
500
600
A
RRM
V
A
V
350
420
RMS
V
Characteristics
Ultra Fast Recovery Diodes
V
500
600
V
DC
C
F
=0.5A, I
Dimensions TO-220AC
R
=1.0A, I
@T
@T
@T
C
J
J
=100 C
=25 C
=100 C
RR
=0.25A.
o
o
o
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Maximum Ratings
Dim.
M
C
D
G
H
N
Q
A
B
E
F
K
L
J
-55 to +150
0.500
0.560
0.380
0.139
2.300
0.100
0.045
0.025
0.190
0.140
0.015
0.080
0.025
Min.
125
500
8.0
1.5
2.5
60
50
-
5
Inches
0.580
0.650
0.420
0.161
0.420
0.135
0.070
0.250
0.035
0.210
0.190
0.022
0.115
0.055
Max.
12.70
14.23
Min.
9.66
3.54
5.85
2.54
1.15
0.64
4.83
3.56
0.38
2.04
0.64
Milimeter
-
o
Unit
C/W
14.73
16.51
10.66
uA
pF
ns
o
Max.
A
A
V
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
C
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STPR850DF Summary of contents
Page 1
... STPR850DF thru STPR860DF Ultra Fast Recovery Diodes A A C(TAB) C A=Anode, C=Cathode, TAB=Cathode V V RRM RMS V V STPR850DF 500 350 STPR860DF 600 420 Symbol Characteristics I Maximum Average Forward Rectified Current (AV) Peak Forward Surge Current 8.3ms Single Half-Sine-Wave I FSM Superimposed On Rated Load (JEDEC METHOD) V Maximum Forward Voltage At 8 ...
Page 2
... STPR850DF thru STPR860DF Ultra Fast Recovery Diodes FIG.1 - FORWARD CURRENT DERATING CURVE 10 WITH HEAT SINK FREE AMBIENT RESISTIVE OR INDUCTIVE LOAD 100 125 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 125 100 ...