BSM400GB60DN2 Siemens (acquired by Infineon Technologies Corporation), BSM400GB60DN2 Datasheet
BSM400GB60DN2
Manufacturer Part Number
BSM400GB60DN2
Description
Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate )
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet
1.BSM400GB60DN2.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM400GB60DN2
Manufacturer:
EUPEC
Quantity:
452
IGBT Power Module
Preliminary data
Semiconductor Group
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 400 GB 60 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 60 °C
= 25 °C
= 60 °C
= 25 °C
= 20 k
p
= 1 ms
V
600V
CE
I
475A
C
1
Package
HALF-BRIDGE 2
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM 400 GB 60 DN2
Ordering Code
C67070-A2120-A67
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1400
2500
F
600
600
475
400
950
800
20
11
0.09
0.18
Apr-25-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec
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