BSM150GB170DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GB170DN2E3166 Datasheet

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BSM150GB170DN2E3166

Manufacturer Part Number
BSM150GB170DN2E3166
Description
Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Enlarged Diode Area )
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet
IGBT Power Module
Preliminary data
Semiconductor Group
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• R
Type
BSM150GB170DN2 E3166 1700V 220A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
G on,min
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
= 10 Ohm
p
= 1 ms
V
CE
I
C
1
Package
HALF-BRIDGE 2
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM150GB170DN2 E3166
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67070-A2709-A67
+ 150
± 20
1700
1700
1250
4000
220
150
440
300
F
0.21
20
11
0.1
Aug-01-1996
Unit
V
A
W
°C
K/W
Vac
mm
-

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