BSM150GB170DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GB170DN2E3166 Datasheet - Page 3

• Manufacturer Part Number: BSM150GB170DN2E3166
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Enlarged Diode Area )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Semiconductor Group
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
d i
Reverse recovery charge
I
d i
T
T
F
F
F
F
j
j
CC
CC
CC
CC
Gon
Gon
Goff
Goff
F
F
= 150 A, V
= 150 A, V
= 150 A, V
= 150 A, V
= 25 °C
= 125 °C
/ dt = -1200 A/µs, T
/ dt = -1200 A/µs
= 1200 V, V
= 1200 V, V
= 1200 V, V
= 1200 V, V
= 10
= 10
= 10
= 10
GE
GE
R
R
= -1200 V, V
= -1200 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 150 A
= 150 A
= 0 V
= 0 V
= 150 A
= 150 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
BSM150GB170DN2 E3166
Values
typ.
520
200
1200
110
14
50
2
1.8
0.7
max.
-
-
-
-
1000
400
1800
160
2.5
Aug-01-1996
Unit
ns
V
µs
µC