BSM150GB170DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GB170DN2E3166 Datasheet - Page 2

• Manufacturer Part Number: BSM150GB170DN2E3166
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Enlarged Diode Area )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Semiconductor Group
Electrical Characteristics, at T
Parameter
Static Characteristics
Gate threshold voltage
V
Collector-emitter saturation voltage
V
V
V
V
Gate-emitter leakage current
V
AC Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Zero gate voltage collector current
GE
GE
GE
CE
CE
GE
CE
CE
CE
CE
= 1700 V, V
= 1700 V, V
= 20 V, I
= 25 V, V
= 25 V, V
= 25 V, V
= V
= 15 V, I
= 15 V, I
= 20 V, V
CE,
I
C
C
C
C
GE
GE
GE
CE
= 10 mA
= 150 A
= 150 A, T
= 150 A, T
GE
GE
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, T
= 0 V, T
j
j
= 25 °C
= 125 °C
j
j
= 25 °C
= 125 °C
j
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
g
C
C
C
CES
GES
fs
GE(th)
CE(sat)
iss
oss
rss
min.
-
-
-
-
-
-
-
-
4.8
54
BSM150GB170DN2 E3166
Values
typ.
-
-
20
5.5
3.4
4.6
1
4
2
0.55
max.
-
-
-
-
-
6.2
3.9
5.3
1.5
400
Aug-01-1996
Unit
V
mA
nA
S
nF