BSM150GB170DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GB170DN2E3166 Datasheet - Page 5

• Manufacturer Part Number: BSM150GB170DN2E3166
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Enlarged Diode Area )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
300
260
240
220
200
180
160
140
120
100
600
500
450
400
350
300
250
200
150
100
80
60
40
20
50
A
A
0
0
0.0
CE
GE
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
1.0
= 80 µs, V
= 80 µs, T
4
2.0
6
CE
j
= 25 °C
3.0
= 20 V
8
4.0
10
V
V
V
V
CE
GE
6.0
14
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
300
260
240
220
200
180
160
140
120
100
80
60
40
20
A
0
0.0
CE
)
p
17V
15V
13V
11V
9V
7V
1.0
BSM150GB170DN2 E3166
= 80 µs, T
2.0
j
= 125 °C
3.0
4.0
Aug-01-1996
V
V
CE
6.0