Si7401DN Vishay Intertechnology, Si7401DN Datasheet - Page 2

• Manufacturer Part Number: Si7401DN
• Description: P-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7401DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
25
20
15
10
5
0
0
b
Parameter
V
a
a
DS
1
Output Characteristics
V
- Drain-to-Source Voltage (V)
a
GS
= 5 thru 2 V
a
J
= 25_C UNLESS OTHERWISE NOTED)
2
Symbol
V
3
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
1 V
f
1.5 V
g
4
V
I
DS
V
D
DS
^ - 1 A, V
= - 10 V, V
I
V
F
= - 16 V, V
V
V
V
V
V
V
DS
V
V
= - 3.2 A, di/dt = 100 A/ms
GS
GS
I
V
DS
S
DS
DD
DD
Test Condition
GS
DS
DS
v - 5 V, V
= - 3.2 A, V
= - 4.5 V, I
= - 2.5 V, I
= - 15 V, I
= - 16 V, V
= - 10 V, R
= - 10 V, R
= V
= - 1.8 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, R
= - 4.5 V, I
= 0 V, T
D
GS
GS
D
D
GS
D
= - 2 mA
GS
D
L
L
= - 9.8 A
= - 11 A
= - 4.5 V
= - 11 A
= 10 W
= 10 W
= - 2 A
= "8 V
= 0 V
= 0 V
J
D
= 85_C
G
30
25
20
15
10
= - 11 A
5
0
= 6 W
0.0
0.5
V
GS
Min
- 0.45
25_C
Transfer Characteristics
- 30
T
- Gate-to-Source Voltage (V)
C
= 125_C
1.0
0.017
0.022
0.027
Typ
- 0.8
130
5.9
5.2
31
29
23
45
95
30
S-03311—Rev. A, 26-Mar-01
Document Number: 71423
1.5
- 55_C
"100
Max
0.021
0.028
0.034
- 1.2
195
140
44
35
70
60
- 1
- 5
2.0
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
2.5