Si7401DN Vishay Intertechnology, Si7401DN Datasheet - Page 3

• Manufacturer Part Number: Si7401DN
• Description: P-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71423
S-03311—Rev. A, 26-Mar-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
Source-Drain Diode Forward Voltage
D
DS
GS
= 11 A
0.2
On-Resistance vs. Drain Current
5
= 10 V
7
= 1.8 V
V
SD
Q
g
I
- Source-to-Drain Voltage (V)
10
D
- Total Gate Charge (nC)
0.4
- Drain Current (A)
T
Gate Charge
14
J
= 150_C
15
0.6
21
20
0.8
T
J
V
V
= 25_C
GS
GS
28
= 2.5 V
= 4.5 V
25
1.0
35
30
1.2
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 11 A
V
V
1
4
= 4.5 V
GS
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
C
oss
= 11 A
50
C
iss
12
3
75
Si7401DN
100
www.vishay.com
16
4
125
150
20
5
3