SB2202 Unisonic Technologies, SB2202 Datasheet - Page 3

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SB2202

Manufacturer Part Number
SB2202
Description
Medium Power LOW Voltage Transistor
Manufacturer
Unisonic Technologies
Datasheet
SB2202
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
10
10
10
1.6
1.2
0.8
0.4
12
0
8
4
0
3
2
1
0
10
-40
0
-2
Current gain- bandwidth product
-Collector - Emitter Voltage, (V)
Case Temperature, T
0
Collector Current , I
4
Static characteristics
10 -
-I
Power derating
1
B
-I
40
= 9mA
8
V
I
B
-I
B=8mA
B
=8mA
CE
=8mA
B
=7mA
=5V
-I
80
12
B
10
=6mA
-I
0
B
=5mA
C
120
-I
(A)
-I
-I
-I
C
B
B
B
16
B
(℃)
= 4mA
=3mA
=2mA
=1mA
150
10
20
1
PNP EPITAXIAL SILICON TRANSISTOR
150
100
50
10
10
10
10
10
10
10
10
0
-
Derating curve of safe operating areas
-2
1
3
2
0
1
0
- 40
1
10
10
I
I
c (max )
c(max )
0
0
Collector output capacitance
-Collector - Base Voltage(V)
, Pulse
, DC
Collector- Emitter Voltage
0
Case Temperature,T
Safe operating area
10 -
40
1
10
1
80
10 -
2
120
C
I
f=1MHz
E
( )
=0
QW-R209-020,A
10
10
150
-
2
3
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