STB10NB20 ST Microelectronics, Inc., STB10NB20 Datasheet

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STB10NB20

Manufacturer Part Number
STB10NB20
Description
N-channel 200V - 0.30 Ohm - 10A - D2PAK Powermesh MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Part Number:
STB10NB20
Manufacturer:
ST
Quantity:
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Part Number:
STB10NB20
Manufacturer:
ST
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Part Number:
STB10NB20T4
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronis has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( )Pulse width limited by safe operating area.
December 2000
STB10NB20
TYPICAL RDS(on) = 0.30
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Symbol
dv/dt
I
V
DM
V
V
P
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
( )
j
(2)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
200 V
V
DSS
Parameter
<0.40
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
N-CHANNEL 200V - 0.30
= 0)
C
C
= 25°C
= 100°C
10 A
I
D
INTERNAL SCHEMATIC DIAGRAM
I
SD
10A, di/dt 300A/µs, V
PowerMESH™ MOSFET
–65 to 150
Value
0.68
±30
200
200
150
5.5
10
40
85
6
(suffix“T4”)
DD
TO-263
D
2
STB10NB20
V
PAK
(BR)DSS
1
- 10A D
3
, T
j
T
JMAX.
2
W/°C
V/ns
PAK
Unit
°C
°C
W
V
V
V
A
A
A
1/8

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STB10NB20 Summary of contents

Page 1

... N-CHANNEL 200V - 0. DS(on) D <0. INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25° 10A, di/dt 300A/µ STB10NB20 - 10A D PowerMESH™ MOSFET PAK TO-263 (suffix“T4”) Value 200 200 ± 0.68 5.5 –65 to 150 150 ...

Page 2

... STB10NB20 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose j AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T ...

Page 3

... (see test circuit, Figure 5) Test Conditions di/dt = 100 A/µ 150 ° (see test circuit, Figure 5) Thermal Impedance STB10NB20 Min. Typ. Max. Unit 7.5 nC 5.5 nC Min. Typ. Max. Unit 8 11 ...

Page 4

... STB10NB20 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized Gate Threshold Voltage vs Temperature STB10NB20 5/8 ...

Page 6

... STB10NB20 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... D PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 8 10.4 0.393 8.5 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8º STB10NB20 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015 7/8 ...

Page 8

... STB10NB20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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