STB10NB20 ST Microelectronics, Inc., STB10NB20 Datasheet - Page 2

• Manufacturer Part Number: STB10NB20
• Description: N-channel 200V - 0.30 Ohm - 10A - D2PAK Powermesh MOSFET
• Manufacturer: ST Microelectronics, Inc.

STB10NB20
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/8
V
Symbol
Symbol
Symbol
Symbol
R
R
R
V
I
(BR)DSS
(*)
DS(on)
I
g
thj-case
thc-sink
thj-amb
I
I
C
C
E
GS(th)
D(on)
C
I
GSS
DSS
fs
AR
T
oss
AS
rss
iss
j
(*)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On Resis-
tance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitances
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
case
DD
I
V
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 50 V)
= 25 °C unless otherwise specified)
= 250 µA
>I
= Max Rating
= Max Rating T
= V
> I
= 25V f = 1 MHz V
= ±30 V
= 10V
= 10 V
D(on)
Test Conditions
Test Conditions
Test Conditions
D(on)
GS
x R
x R
DS(on)max
DS(on)max
V
I
GS
I
D
D
C
= 5 A
= 250 µA
= 0
= 125 °C
I
GS
D
Max
Max
Typ
=5 A
= 0
Min.
Min.
Min.
200
10
3
3
Max Value
1.47
62.5
300
150
0.5
Typ.
Typ.
0.30
Typ.
10
470
135
22
4
4
Max.
±100
Max.
Max.
0.40
650
190
10
30
1
5
°C/W
°C/W
°C/W
Unit
mJ
°C
Unit
Unit
Unit
A
µA
µA
nA
pF
pF
pF
V
V
A
S