2SB649 Renesas, 2SB649 Datasheet
2SB649
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2SB649 Summary of contents
Page 1
... Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD Silicon PNP Epitaxial 1. Emitter 2. Collector 3. Base ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value Ratings Symbol 2SB649 V –180 CBO V –120 CEO V – ...
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... FE2 Collector to emitter V CE(sat) saturation voltage Base to emitter voltage V BE Gain bandwidth product f T Collector output Cob capacitance Notes: 1. The 2SB649 and 2SB649A are grouped Pulse test B C 2SB649 60 to 120 100 to 200 2SB649A 60 to 120 100 to 200 2SB649 2SB649A ...
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... Maximum Collector Dissipation Curve Case temperature T Typical Output Characteristics –1.0 –0.8 –0.6 –0.4 –0.2 0 –10 –20 Collector to emitter voltage V 4 –3 I Cmax –1.0 –0.3 DC Operation (T –0.1 –0.03 –0.01 100 150 –1 – Collector to emitter voltage V C –500 ...
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... Collector current I Gain Bandwidth Product 240 V = – 200 160 120 –1,000 –10 –30 Collector current I 2SB649, 2SB649A –25 25 –100 –1,000 (mA) C vs. Collector Current –100 –300 –1,000 (mA ...
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... Collector Output Capacitance vs. Collector to Base Voltage 200 MHz 100 –1 –3 –10 –30 Collector to base voltage V CB –100 (V) ...
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Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-126 Mod — — 0.67 g ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...