2SB649 Renesas, 2SB649 Datasheet - Page 3

• Manufacturer Part Number: 2SB649
• Description: Bipolar Power General Purpose Transistor
• Manufacturer: Renesas

Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SB649 and 2SB649A are grouped by h
2SB649
2SB649A
2. Pulse test
B
60 to 120
60 to 120
Symbol
V
V
V
I
h
V
Cob
CBO
T
FE1
FE2
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
C
100 to 200
100 to 200
1
2SB649
Min
–180 —
–120 —
–5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
140
27
D
160 to 320
—
Max
—
—
—
–10
320
—
–1
–1.5
—
—
FE1
Min
–180 —
–160 —
–5
—
60
30
—
—
—
2SB649A
—
as follows.
Typ
—
—
—
—
—
—
140
27
Max
—
—
—
–10
200
—
–1.5
—
—
–1
Unit
V
V
V
V
V
MHz
pF
A
2SB649, 2SB649A
Test conditions
I
I
I
V
V
I
V
I
I
I
V
I
V
I
V
f = 1 MHz
C
C
E
C
C
C
B
C
C
CB
CE
CE
CE
CE
CB
= –1 mA, I
= –50 mA
= –1 mA, I
= –10 mA, R
= –150 mA
= –500 mA*
= –500 mA,
= –150 mA
= –150 mA
= –160 V, I
= –5 V,
= –5 V,
= –5 V,
= –5 V,
= –10 V, I
C
E
E
= 0
= 0
2
E
BE
= 0,
= 0
=
3