L320MT90QI Advanced Micro Devices, L320MT90QI Datasheet - Page 51

• Manufacturer Part Number: L320MT90QI
• Description: 32 Megabit 2 M X 16-bit/4 M X 8-bit Mirrorbit 3.0 Volt-only Boot Sector Flash Memory - Advanced Micro Devices
• Manufacturer: Advanced Micro Devices

AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words (or 1–32 bytes in byte mode) programmed.
4. Effective write buffer specification is based upon a 16-word (or 32-byte) write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
May 16, 2003
JEDEC
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
ELAX
ELEH
EHEL
AVAV
Parameter
t
t
WHWH1
WHWH2
t
Std.
t
GHEL
t
t
t
t
t
t
t
t
t
CPH
WC
WH
DH
WS
RH
AS
AH
DS
CP
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program
Operation (Notes 2, 4)
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Single Word/Byte Program Operation
(Note 2, 5)
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
Sector Erase Operation (Note 2)
RESET# High Time Before Write (Note 1)
D A T A S H E E T
Am29LV320MT/B
Per Word
Per Word
Per Byte
Per Byte
Word
Word
Byte
Byte
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Min
90R
90
Speed Options
100R
100,
100
6.25
12.5
240
7.5
0.5
45
45
45
30
15
60
60
54
54
50
0
0
0
0
0
110R
110,
110
120R
120,
120
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
µs
µs
ns
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