BSP320 Siemens Semiconductor Group, BSP320 Datasheet

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BSP320

Manufacturer Part Number
BSP320
Description
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
Manufacturer
Siemens Semiconductor Group
Datasheet

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SIPMOS
Type
BSP 320 S
Maximum Ratings
Parameter
Continuous drain current
T
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 14.3 mH, T
Avalanche energy, periodic limited by T
Avalanche current, repetitive,limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Semiconductor Group
• N channel
• Enhancement mode
• Avalanche rated
• V
D
S
A
A
A
jmax
A
= 2.9 A, V
= 2.9 A, V
= 25 °C
= 100 °C
= 25 °C
= 25 °C
GS(th)
= 150 °C
= 2.1 ... 4.0 V
®
Small-Signal Transistor
DS
DD
j
= 40 V, d i /d t = 200 A/µs
= 25 V, R
= 25 °C
V
60 V
DS
GS
= 25
I
2.9 A
D
j(max)
j(max)
R
0.12
DS(on)
1
Package
SOT-223
Symbol
I
I
E
E
I
d v /d t
V
P
D
Dpuls
AR
AS
AR
GS
tot
Marking
Pin 1
G
Values
Pin 2
1.85
11.6
0.18
Ordering Code
Q67000-S4001
2.9
2.9
1.8
60
6
D
20
Pin 3
S
29/01/1998
BSP 320 S
Unit
A
mJ
A
KV/µs
V
W
Pin 4
D

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BSP320 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) Type BSP 320 2.9 A Maximum Ratings Parameter Continuous drain current T = ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb 1,5 mm with 6 ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance 2 DS(on)max, D Input capacitance = MHz Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 5 ...

Page 5

Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I =f parameter : ...

Page 6

Typ. output characteristics parameter µ ° 6 tot 5.5 I 5.0 D 4.5 4.0 3.5 ...

Page 7

Drain-source on-resistance (on) j parameter 2 0. (on) 0.24 0.20 0.16 98% 0.12 typ 0.08 0.04 0.00 -60 - Typ. capacitances C ...

Page 8

Avalanche energy parameter 2 14 ...

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