BC81716LT1 Motorola Inc, BC81716LT1 Datasheet

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BC81716LT1

Manufacturer Part Number
BC81716LT1
Description
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
Manufacturer
Motorola Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Bergquist Company.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation FR– 5 Board, (1)
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
Collector – Emitter Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cutoff Current
Motorola, Inc. 1996
T A = 25 C
Derate above 25 C
Alumina Substrate, (2) T A = 25 C
Derate above 25 C
(I C = –10 mA)
(V EB = 0, I C = –10 A)
(I E = –1.0
(V CB = 20 V)
(V CB = 20 V, T A = 150 C)
m
A)
Characteristic
Rating
Characteristic
(T A = 25 C unless otherwise noted)
Symbol
Symbol
T J , T stg
V CEO
V CBO
V EBO
R
R
P D
P D
I C
q
q
JA
JA
– 55 to +150
Value
Max
500
225
556
300
417
5.0
1.8
2.4
45
50
BASE
2
COLLECTOR
mW/ C
mW/ C
mAdc
Unit
Unit
mW
mW
C/W
C/W
EMITTER
V
V
V
C
V (BR)CEO
V (BR)EBO
V (BR)CES
3
1
Symbol
I CBO
Min
5.0
45
50
BC817-16LT1
BC817-25LT1
BC817-40LT1
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ
1
Order this document
2
by BC817–16LT1/D
Max
100
5.0
3
Unit
nA
V
V
V
A
1

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BC81716LT1 Summary of contents

Page 1

... Collector Cutoff Current ( 150 C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a registered trademark of the Bergquist Company. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 COLLECTOR 3 2 BASE ...

Page 2

... mA 5.0 Vdc 100 MHz) Output Capacitance ( 1.0 MHz) 2 Symbol h FE BC817–16 BC817–25 BC817–40 V CE(sat) V BE(on) C obo Motorola Small–Signal Transistors, FETs and Diodes Device Data Min Typ Max Unit — 100 — 250 160 — 400 250 — ...

Page 3

... Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. Motorola Small–Signal Transistors, FETs and Diodes Device Data BC817-16LT1 BC817-25LT1 BC817-40LT1 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process ...

Page 4

... Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Motorola Small–Signal Transistors, FETs and Diodes Device Data *BC817-16LT1/D* NOTES: 1 ...

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