BC856-BC860 Siemens Semiconductor Group, BC856-BC860 Datasheet
BC856-BC860
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BC856-BC860 Summary of contents
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... PNP Silicon AF Transistors Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, Type Marking BC 856 A 3As BC 856 B 3Bs BC 857 A 3Es BC 857 B 3Fs BC 857 C 3Gs BC 858 A 3Js ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation Junction temperature Storage temperature range Thermal Resistance 1) Junction - ambient Junction - ...
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Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage = Collector-emitter breakdown voltage ...
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Electrical Characteristics ˚C, unless otherwise specified. A Parameter AC characteristics Transition frequency mA 100 MHz C CE Output capacitance = MHz V ...
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Total power dissipation P * Package mounted on epoxy Permissible pulse load P Semiconductor Group = Collector-base capacitance C tot A S Emitter-base capacitance Transition frequency f tot max ...
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Collector cutoff current current gain Semiconductor Group = Collector-emitter saturation voltage CB0 ...
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Noise figure 0.2 mA kHz Semiconductor Group ...
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Noise figure 120 Noise figure kHz V CE Semiconductor Group BC 856 ... BC ...