BUP303 Siemens Semiconductor Group, BUP303 Datasheet

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BUP303

Manufacturer Part Number
BUP303
Description
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BUP303.pdf (7 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUP303
Manufacturer:
FSC
Quantity:
5 000
IGBT
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 303
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Avalanche energy, single pulse
I
L = 3 mH, T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
GE
= 10 A, V
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 25 °C
= 20 k
Preliminary data
CC
j
= 25 °C
= 24 V, R
GE
p
= 1 ms
= 25
V
1000V 23A
CE
I
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
E
P
T
T
C
Cpuls
j
stg
CE
CGR
GE
AS
tot
Pin 1
G
Ordering Code
Q67078-A4202-A2
-55 ... + 150
-55 ... + 150
Values
± 20
1000
1000
200
23
15
46
30
20
Pin 2
C
Jul-30-1996
BUP 303
Unit
V
A
mJ
W
°C
Pin 3
E

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BUP303 Summary of contents

Page 1

IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 303 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 CE, ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 220 W 180 P tot 160 140 120 100 Safe operating area ...

Page 5

Typ. output characteristics ( ) parameter µ 125 ° Typ. saturation characteristics CE(sat) GE parameter °C j ...

Page 6

Typ. gate charge Gate parameter puls 400 Typ. switching time t ...

Page 7

Package Outlines Dimensions in mm Weight Semiconductor Group 7 BUP 303 Jul-30-1996 ...

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