BUP306D Siemens Semiconductor Group, BUP306D Datasheet - Page 4

• Manufacturer Part Number: BUP306D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
parameter: T
P
Safe operating area
I
parameter: D = 0 , T
Semiconductor Group
C
tot
I
tot
C
= ( V
= ( T
10
10
10
10
170
140
120
100
80
60
40
20
W
A
-1
0
2
1
0
10
CE
0
C
0
)
)
20
j
150 °C
40
10
1
C
= 25°C , T
60
80
10
2
100
j
DC
120
150 °C
t p = 13.0µs
10
3
100 µs
1 ms
10 ms
T
V
°C
C
CE
V
160
4
Collector current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( T
K/W
10
10
10
10
= ( t
24
20
18
16
14
12
10
A
8
6
4
2
0
-1
-2
-3
0
C
10
0
)
-5
p
)
20
GE
single pulse
10
p
40
-4
15 V , T
/ T
60
10
-3
j
80
150 °C
10
100
-2
IGBT
120
BUP 306D
D = 0.50
Jul-30-1996
10
T
t
°C
-1
p
0.20
0.10
0.05
0.02
0.01
C
s
160
10
0