SMB1W-660N-I Roithner LaserTechnik GmbH, SMB1W-660N-I Datasheet
SMB1W-660N-I
Related parts for SMB1W-660N-I
SMB1W-660N-I Summary of contents
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... TECHNICAL DATA High Power LED, SMD SMB1W-660N-I are AlGaInP High Power LEDs, isolated mounted on a cooper heat sink with a 5x5 mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 350 peak wavelength of 660 nm. Specifications • Structure: AlGaAs, 1W high power chip • ...
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... The above specifications are for reference purpose only and subjected to change without prior notice. Typical Performance Curves Forward Current – Forward Voltage Forward Current – Pulse Duration 07.04.2011 Relative Radiant Intensity –Forward Current Allowed Forward Current – Ambient Temperature SMB1W-660N ...
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... Relative Radiant Intensity – Ambient Temperature Peak Wavelength 07.04.2011 Forward Voltage – Ambient Temperature Peak Wavelength – Ambient Temperature SMB1W-660N ...
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... Viewing half angle SMB1W-660N-I SMB1W-660N-I-02 SMB1W-660N-I-04 07.04.2011 SMB1W-660N-I-01 SMB1W-660N-I-05 SMB1W-660N ...
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... LEDs. • All devices, equipment and machinery must be grounded properly recommended that precautions should be taken against surge voltage to the equipment that mounts the LEDs. 07.04.2011 Recommended Land Layout (Unit: mm) Soldering Conditions SMB1W-660N ...