MMDF2N05ZR2 Motorola, MMDF2N05ZR2 Datasheet

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MMDF2N05ZR2

Manufacturer Part Number
MMDF2N05ZR2
Description
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS
Manufacturer
Motorola
Datasheet

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Part Number:
MMDF2N05ZR2G
Manufacturer:
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Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Medium Power Surface Mount Products
TMOS Dual N-Channel with
Monolithic Zener ESD
Protected Gate
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R DS(on) and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
(1) When mounted on G10/FR–4 glass epoxy board using minimum recommended footprint.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
REV 1
MAXIMUM RATINGS
DEVICE MARKING
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ T A = 25 C
Drain Current
Drain Current
Total Power Dissipation @ T A = 25 C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering Purposes
D2N05Z
MMDF2N05ZR2
EZFETs
Motorola, Inc. 1997
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
Device
are an advanced series of power MOSFETs which
— Continuous @ T A = 70 C
— Single Pulse (t p
(T J = 25 C unless otherwise noted)
Reel Size
ORDERING INFORMATION
Data Sheet
13
10 s)
12 mm embossed tape
Tape Width
Rating
2500 units
Quantity
G
D
S
Symbol
T J , T stg
V DGR
V DSS
R JA
Source–1
Source–2
MMDF2N05ZR2
V GS
I DM
P D
T L
I D
I D
Gate–1
Gate–2
R DS(on) = 0.300 OHM
CASE 751–05, Style 11
Motorola Preferred Device
POWER MOSFET
2.0 AMPERES
DUAL TMOS
50 VOLTS
– 55 to 150
Order this document
by MMDF2N05ZR2/D
Top View
SO–8
1
2
3
4
Value
62.5
260
2.0
1.7
8.0
2.0
50
50
15
8
7
6
5
Drain–1
Drain–1
Drain–2
Drain–2
Watts
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
C
C
1

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MMDF2N05ZR2 Summary of contents

Page 1

... Bergquist Company. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 D G Rating Tape Width Quantity 2500 units Order this document by MMDF2N05ZR2/D MMDF2N05ZR2 Motorola Preferred Device DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS R DS(on) = 0.300 OHM CASE 751–05, Style 11 SO–8 S ...

Page 2

... MMDF2N05ZR2 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc Gate–Body Leakage Current ( ...

Page 3

... Figure 4. On–Resistance versus Drain Current 100 0.1 0. 100 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–to–Source Leakage Current MMDF2N05ZR2 100 –55 C 3.5 4 4.5 5 5 2.5 3 3 DRAIN CURRENT (AMPS) ...

Page 4

... MMDF2N05ZR2 Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses 0.55 0.6 0.65 0.7 0. SOURCE–TO–DRAIN VOLTAGE (VOLTS) MMDF2N05ZR2 t d(off d(on GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.8 0.85 ...

Page 6

... MMDF2N05ZR2 The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...

Page 7

... Figure 14. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data Dual SO–8 Thermal RC Network Chip 0.0106 0.0431 0.1643 0.0253 F 0.1406 F 0.5064 F 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 13. Thermal Response di/ TIME 0. MMDF2N05ZR2 0.3507 0.4302 2.9468 F 177.14 F Ambient 1.0E+01 1.0E+02 1.0E+03 7 ...

Page 8

... MMDF2N05ZR2 INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface 0.024 The power dissipation of the SO– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 15. Typical Solder Heating Profile MMDF2N05ZR2 STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS DIM MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.40 1. STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 Mfax is a trademark of Motorola, Inc. MMDF2N05ZR2/D ...

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