MMDF2N05ZR2 Motorola, MMDF2N05ZR2 Datasheet - Page 6

• Manufacturer Part Number: MMDF2N05ZR2
• Description: DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS
• Manufacturer: Motorola

the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (T C ) of 25 C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
verse any load line provided neither rated peak current (I DM )
nor rated voltage (V DSS ) is exceeded, and that the transition
time (t r , t f ) does not exceed 10 s. In addition the total power
MMDF2N05ZR2
6
The Forward Biased Safe Operating Area curves define
Switching between the off–state and the on–state may tra-
0.01
100
0.1
10
1
0.1
Figure 12. Maximum Rated Forward Biased
V GS = 20 V
SINGLE PULSE
T C = 25 C
di/dt = 300 A/ s
Figure 11. Reverse Recovery Time (t rr )
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
SAFE OPERATING AREA
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
1
t, TIME
dc
averaged over a complete switching cycle must not exceed
(T J(MAX) – T C )/(R JC ).
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
A power MOSFET designated E–FET can be safely used
Standard Cell Density
Motorola TMOS Power MOSFET Transistor Device Data
High Cell Density
10
t a
10 ms
t rr
1 ms
t rr
t b
100