MMBT2222AL-AN3-R Unisonic Technologies, MMBT2222AL-AN3-R Datasheet - Page 5

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MMBT2222AL-AN3-R

Manufacturer Part Number
MMBT2222AL-AN3-R
Description
Npn Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
MMBT2222A
TYPICAL CHARACTERISTICS
500
100
0.1
0.8
0.6
0.4
10
500
400
300
200
100
1
1
0
25
1
0.1 0.3
UNISONIC TECHNOLOGIES CO., LTD
V
www.unisonic.com.tw
β=10
CB
V
125℃
25℃
Base-Emitter Saturation Voltage vs .
DC Current Gain
CE
=40V
-40℃
Base-Emitter Saturation Voltage
Ambient Temperature , T
=5V
-40℃
50
Collector Current , I
Collector Current , I
vs. Collector Current
1
Collector Current
25℃
10
75
vs. Collector Current
125℃
10
100
30
C
C
(mA)
100
(mA)
A
125
100
(℃)
300
150
500
0.8
0.6
0.4
0.2
20
16
12
0.4
0.3
0.2
0.1
1
8
4
0.1
0.1
1
V
Base-Emitter on Voltage vs. Collector
Capacitance vs. Reverse Bias Voltage
Collector-Emitter Saturation Voltage vs .
β=10
CE
f=1MHz
=5V
NPN SILICON TRANSISTOR
-40℃
Emitter Transition and Output
Reverse Bias Voltage (V)
Collector Current , I
Collector Current , I
C
Collector Current
1
ob
10
1
Current
25℃
25℃
125℃
C
125℃
10
C
C
te
(mA)
100
(mA)
-40℃
10
QW-R206-019,D
500
100
5 of 6
25

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