IRF7751GPBF International Rectifier, IRF7751GPBF Datasheet
IRF7751GPBF
Related parts for IRF7751GPBF
IRF7751GPBF Summary of contents
Page 1
... GS Pulsed Drain Current ƒ Power Dissipation ƒ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Parameter ƒ Maximum Junction-to-Ambient PD - 96145A IRF7751GPbF ® HEXFET Power MOSFET V R max DSS DS(on) -30V 35mΩ@V = -10V -4.5A GS 55mΩ@ ...
Page 2
Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I ...
Page 3
DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T = 150 0.1 2 Fig 3. Typical Transfer Characteristics www.irf.com www.DataSheet.in VGS TOP -10.0V -7.0V ...
Page 4
C iss 2400 1600 800 C oss C rss Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 0.1 0.2 0 Fig 7. Typical Source-Drain Diode ...
Page 5
T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 0.1 0.00001 Fig 11. Maximum ...
Page 6
GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs Fig 14a. Basic Gate Charge Waveform 6 www.DataSheet. -4.5A 5.0 6.0 7.0 8.0 9.0 ...
Page 7
TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! DI9@Y 6SF r "Y r! 'YÃi 8 iii hhh 8 'ÃTVSA 9D@ T " Note: For the most current drawing ...
Page 8
G@) GPUÃ8P9@ TSSOP-8 Tape and Reel Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 www.DataSheet.in UCDTÃDTÃ6IÃDSA''$! 7A 6SUÃIVH7@S 96U@Ã8P9@Ã`XX Ã2ÃGrhqA…rrÃvqvph‡‚… %À€ A@@9Ã9DS@8UDPI IPU@T) 'À€ ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$# Data and specifications ...