IRF7751GPBF International Rectifier, IRF7751GPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7751GPBF
• Description: Power MOSFET
• Manufacturer: International Rectifier

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Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
SM
R
I
S
rr
I
d(on)
r
d(off)
f
DSS
fs
GSS
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤
max. junction temperature.
2
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
–––
–––
––– 1464 –––
–––
–––
–––
–––
––– 0.020 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
6.8
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
155
227
146
5.5
5.0
23
19
29
13
16
80
-1.2
–––
-2.5
–––
100
–––
–––
233
120
–––
–––
-15
-25
-18
-1.0
35
28
35
55
44
20
24
V/°C
mΩ
nC
µA
nA
nC
ns
ns
pF
V
V
V
S
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
V
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
DS
GS
= -4.5A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V
= 0V
= -10V‚
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.0A, V
= -1.0A
D
GS
GS
= -250µA
= -4.5A
= -4.5A ‚
‚
= -3.8A ‚
= 0V
= 0V, T
D
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= -1mA
GS
J
= 70°C
G
= 0V ‚
D
S