2SK2367 NEC, 2SK2367 Datasheet

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2SK2367

Manufacturer Part Number
2SK2367
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No. TC-2506
Date Published December 1994 P
Printed in Japan
(O. D. No. TC-8065)
DESCRIPTION
designed for high voltage switching applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (2SK2367/2SK2368)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
** Starting T
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor
Low On-Resistance
2SK2367: R
2SK2368: R
Low C
High Avalanche Capability Ratings
iss
10 s, Duty Cycle
ch
C
DS (on)
DS (on)
= 25 ˚C, R
iss
= 1 600 pF TYP.
= 0.5
= 0.6
G
c
A
= 25
= 25 ˚C)
(V
(V
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
GS
GS
= 10 V, I
= 10 V, I
, V
GS
= 20 V
DATA SHEET
INDUSTRIAL USE
D
D
V
V
I
I
P
P
T
T
I
E
A
D (DC)
D (pulse)
AS
= 8.0 A)
= 8.0 A)
T1
T2
ch
stg
DSS
GSS
AS
= 25 ˚C)
SWITCHING
2SK2367/2SK2368
MOS FIELD EFFECT TRANSISTORS
–55 to +150 ˚C
0
450/500
120
150
161
3.0
15
30
15
60
mJ
W
W
˚C
V
V
A
A
A
2.2±0.2
5.45
15.7 MAX.
PACKAGE DIMENSIONS
1
Gate
2
(in millimeter)
3
4
5.45
1.0±0.2
MP-88
Source
3.2±0.2
Drain
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.6±0.1
Body
Diode
©
2.8±0.1
4.7 MAX.
1.5
1995
1994

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2SK2367 Summary of contents

Page 1

... DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2367 0.5 DS (on) 2SK2368 0.6 DS (on) • Low 600 pF TYP. iss iss • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage (2SK2367/2SK2368) ...

Page 2

... F (S-D) t 400 1.8 rr Test Circuit 2 Switching Time D.U. PG Duty Cycle 2SK2367/2SK2368 TEST CONDITIONS 2SK2367 8.0 A 2SK2368 8 DSS ...

Page 3

... CASE TEMPERATURE 120 100 140 160 0 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2SK2368 8 2SK2367 4 1 000 Pulsed 15 2SK2367/2SK2368 100 120 140 160 T - Case Temperature - ˚C C Pulsed = Drain to Source Voltage - V 3 ...

Page 4

... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Pulsed 1.0 0.5 100 0 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 4.0 3.0 2.0 1.0 0 100 –50 2SK2367/2SK2368 R = 41.7 ˚C/W th (ch- 1.04 ˚C/W th (ch- ˚C C Single Pulse 10 100 1 000 Pulsed 2 Gate to Source Voltage - V ...

Page 5

... V - Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1 000 = 0 iss 100 10 C oss 1.0 1 000 0.1 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 V 300 200 100 V DS 100 0 10 2SK2367/2SK2368 Pulsed 1.0 1 d(on) t d(off 150 100 - Drain Current - ...

Page 6

... V = 150 V DD 150 100 100 125 150 Starting Tch-Starting Channel Temperature - ˚C 6 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1.0 175 100 u 2SK2367/2SK2368 150 Starting ˚ 100 Inductive load - H ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2367/2SK2368 Document No. TEI-1202 IEI-1209 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2367/2SK2368 M4 94.11 ...

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